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參數(shù)資料
| 型號： | PHB71NQ03LT |
| 英文描述： | Rail-to-Rail Input Rail-to-Rail Output Zero-Drift Op Amp; Package: SO; No of Pins: 8; Temperature Range: -40°C to +85°C |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 75A條（丁）|對263AB |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 263K |
| 代理商： | PHB71NQ03LT |
Philips Semiconductors
PHP/PHB/PHD71NQ03LT
TrenchMOS logic level FET
Product data
Rev. 01 — 25 June 2002
3 of 14
9397 750 09821
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse; V
GS
= 10V.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Pder
(%)
03ai74
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Ider
(%)
P
der
P
tot 25 C
°
)
-----------------------
100
%
×
=
I
der
I
D 25 C
°
)
-------------------
100
%
×
=
03ai76
1
10
102
103
1
10
102
VDS (V)
ID
(A)
DC
10 ms
Limit RDSon = VDS
/ ID
1 ms
tp = 10
μ
s
100
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| PHB71NQ03LT | 制造商:NXP Semiconductors 功能描述:MOSFET N 30V D2-PAK |
| PHB73N06T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| PHB73N06T,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB78NQ03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| PHB78NQ03LT /T3 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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