- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367939 > PHB71NQ03LT Rail-to-Rail Input Rail-to-Rail Output Zero-Drift Op Amp; Package: SO; No of Pins: 8; Temperature Range: -40°C to +85°C PDF資料下載
參數(shù)資料
| 型號： | PHB71NQ03LT |
| 英文描述： | Rail-to-Rail Input Rail-to-Rail Output Zero-Drift Op Amp; Package: SO; No of Pins: 8; Temperature Range: -40°C to +85°C |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 75A條（?。﹟對263AB |
| 文件頁數(shù)： | 5/14頁 |
| 文件大?。?/td> | 263K |
| 代理商： | PHB71NQ03LT |
Philips Semiconductors
PHP/PHB/PHD71NQ03LT
TrenchMOS logic level FET
Product data
Rev. 01 — 25 June 2002
5 of 14
9397 750 09821
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Characteristics
Table 4:
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 30 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 5 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
= 10 V; I
D
= 25 A;
Figure 7
30
27
-
-
-
-
V
V
V
GS(th)
gate-source threshold voltage
1
0.6
-
1.9
-
-
2.5
-
2.9
V
V
V
I
DSS
drain-source leakage current
-
-
-
0.05
-
10
1
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
-
-
-
12
21.6
8
15.2
27.4
10
m
m
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 25 A; V
GS
= 0 V;
Figure 12
t
rr
reverse recovery time
Q
r
recovered charge
I
D
= 50 A; V
DD
= 15 V; V
GS
= 5 V;
Figure 13
-
-
-
-
-
-
-
-
-
-
13.2
5.3
4.6
1220 -
330
140
15
150
13.5
18
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
Figure 11
-
-
-
-
-
-
V
DD
= 15 V; I
D
= 25 A; V
GS
= 4.5 V; R
G
= 5.6
-
-
-
0.9
29
20
1.2
-
-
V
ns
nC
I
S
= 10 A; dI
S
/dt =
100 A/
μ
s; V
GS
= 0 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHE13002AU | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| PHE13003AU | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| PHE13003 | Silicon Diffused Power Transistor |
| PHE448 | Pulse capacitor, polypropylene film/foil |
| PHE820MB5100MR06 | High Efficiency Step-Down and Inverting DC/DC Converter; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHB71NQ03LT | 制造商:NXP Semiconductors 功能描述:MOSFET N 30V D2-PAK |
| PHB73N06T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| PHB73N06T,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB78NQ03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| PHB78NQ03LT /T3 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。