參數(shù)資料
型號(hào)： PHD11N06LT
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS transistor Logic level FET(N溝道TrenchMOS 晶體管邏輯電平場(chǎng)效應(yīng)管)
中文描述： 10.3 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, DPAK-3
文件頁(yè)數(shù)： 1/12頁(yè)
文件大小： 112K
代理商： PHD11N06LT
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
Logic level FET
PHP11N06LT, PHB11N06LT
PHD11N06LT
FEATURES
SYMBOL
QUICK REFERENCE DATA
V
DSS
= 55 V
’Trench’
technology
Low on-state resistance
Fast switching
Logic level compatible
I
D
= 10.5 A
R
DS(ON)
≤
150 m
(V
GS
= 5 V)
R
DS(ON)
≤
130 m
(V
GS
= 10 V)
GENERAL DESCRIPTION
N-channelenhancement mode,logic level, field-effectpower transistor in aplastic envelopeusing ’
trench
’technology.
Applications:-
d.c. to d.c. converters
switched mode power supplies
The PHP11N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB11N06LT is supplied in the SOT404 (D
2
PAK) surface mounting package.
The PHD11N06LT is supplied in the SOT428 (DPAK) surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D
2
PAK)
SOT428 (DPAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
V
GSM
Pulsed gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
55
55
±
15
±
20
10.3
7.3
41
33
175
UNIT
V
V
V
V
A
A
A
W
C
T
j
≤
150C
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
d
g
s
1 2 3
tab
1
3
tab
2
1
2
3
tab
1
It is not possible to make connection to pin:2 of the SOT404 or SOT428 packages.
August 1999
1
Rev 1.000
相關(guān)PDF資料
PDF描述
PHP125N06L TrenchMOS transistor Logic level FET(TrenchMOS 晶體管標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管)
PHB125N06L TrenchMOS transistor Logic level FET(TrenchMOS 晶體管邏輯電平FET)
PHP125N06LT TrenchMOS transistor Logic level FET
PHP125N06T TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管)
PHP125 P-channel enhancement mode MOS transistor(P溝道增強(qiáng)型MOS晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHD-128-4002-BLK 制造商:PRO POWER (FORMERLY FROM SPC) 功能描述:HEAT SHRINK TUBING 50.8MM ID PO BLK 制造商:PRO POWER (FORMERLY FROM SPC) 功能描述:HEAT SHRINK TUBING, 50.8MM ID, PO, BLK, 制造商:pro-power 功能描述:HEAT SHRINK TUBING, 50.8MM ID, PO, BLK, 8FT, PK2; I.D. Supplied - Metric:50.8mm; I.D. Supplied - Imperial:2"; I.D. Recovered Max - Metric:25.4mm; I.D. Recovered Max - Imperial:1"; Shrink Ratio:2:1; Shrink Tubing / Boot Color:Black ;RoHS Compliant: Yes
PHD-128-6002-BLK 制造商:PRO POWER (FORMERLY FROM SPC) 功能描述:HEAT SHRINK TUBING BLK 制造商:pro-power 功能描述:HEAT SHRINK TUBING, 50.8MM ID, PO, BLK, 1FT, PK2; I.D. Supplied - Metric:50.8mm; I.D. Supplied - Imperial:2"; I.D. Recovered Max - Metric:25.4mm; I.D. Recovered Max - Imperial:1"; Shrink Ratio:2:1; Shrink Tubing / Boot Color:Black ;RoHS Compliant: Yes
PHD12N10E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
PHD12NQ15T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor
PHD13003C 制造商:NXP Semiconductors 功能描述:TRANSISTORDIODENPN400V1.5ATO92 制造商:NXP Semiconductors 功能描述:TRANSISTOR,DIODE,NPN,400V,1.5A,TO92 制造商:NXP Semiconductors 功能描述:TRANSISTOR,DIODE,NPN,400V,1.5A,TO92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:2.1W; DC Collector Current:1.5A; DC Current Gain hFE:17; No. of Pins:3 ;RoHS Compliant: Yes
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*