參數(shù)資料
型號(hào)： PHD11N06LT
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： N-channel TrenchMOS transistor Logic level FET(N溝道TrenchMOS 晶體管邏輯電平場(chǎng)效應(yīng)管)
中文描述： 10.3 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, DPAK-3
文件頁(yè)數(shù)： 7/12頁(yè)
文件大?。?/td> 112K
代理商： PHD11N06LT
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
Logic level FET
PHP11N06LT, PHB11N06LT
PHD11N06LT
MECHANICAL DATA
Fig.16. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g)
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to mounting instructions for SOT78 (TO220AB) package.
3. Epoxy meets UL94 V0 at 1/8".
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT78
TO-220
D
D1
q
P
L
1
2
3
L2
(1)
b1
e
e
b
0
5
10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220
SOT78
DIMENSIONS (mm are the original dimensions)
A
E
A1
c
Note
1. Terminals in this zone are not tinned.
Q
L1
UNIT
A1
b1
D1
e
P
mm
2.54
q
Q
A
b
D
c
L2
(1)
3.0
3.8
3.6
15.0
13.5
3.30
2.79
3.0
2.7
2.6
2.2
0.7
0.4
15.8
15.2
0.9
0.7
1.3
1.0
4.5
4.1
1.39
1.27
6.4
5.9
10.3
9.7
L1
E
L
97-06-11
August 1999
7
Rev 1.000
相關(guān)PDF資料
PDF描述
PHP125N06L TrenchMOS transistor Logic level FET(TrenchMOS 晶體管標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管)
PHB125N06L TrenchMOS transistor Logic level FET(TrenchMOS 晶體管邏輯電平FET)
PHP125N06LT TrenchMOS transistor Logic level FET
PHP125N06T TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管)
PHP125 P-channel enhancement mode MOS transistor(P溝道增強(qiáng)型MOS晶體管)
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