參數(shù)資料
型號: PHD37N06LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS transistor Logic level FET
中文描述: 37 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SOT-428, 3 PIN
文件頁數(shù): 10/10頁
文件大?。?/td> 79K
代理商: PHD37N06LT
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP37N06LT, PHB37N06LT, PHD37N06LT
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998
10
Rev 1.400
相關(guān)PDF資料
PDF描述
PHP37N06T TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標(biāo)準(zhǔn)電平場效應(yīng)管)
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PHB3N40E PowerMOS transistors Avalanche energy rated
PHD3N40E PowerMOS transistors Avalanche energy rated
PHP3N50 PowerMOS transistor
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