參數(shù)資料
型號: PHD37N06LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS transistor Logic level FET
中文描述: 37 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SOT-428, 3 PIN
文件頁數(shù): 4/10頁
文件大?。?/td> 79K
代理商: PHD37N06LT
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP37N06LT, PHB37N06LT, PHD37N06LT
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
1
10
100
1
10
100
1000
tp =
1 us
10us
100 us
1 ms
10ms
100ms
ID/A
VDS/V
RDS(ON) = VDS/ID
DC
0
10
20
30
40
50
60
25
30
35
40
45RDS(ON)/mOhm
VGS/V =
ID/A
4
4.2
4.4
4.6
4.8
5
1.0E-06
0.0001
0.01
t/s
1
100
0.01
0.1
1
10ZTH/ (K/W)
0.5
0.2
0.1
0.05
0.02
0
D =
t
p
t
p
T
T
P
D
t
0
1
2
3
4
5
6
7
0
10
20
30
40
50
60
70
ID/A
VGS/V
Tj/C =
175
25
0
2
6
8
10
0
20
40
60
80
100
10
7
VGS = 6.0 V
5.6
5.0
4.6
4.0
3.6
3.0
Drain current, ID (A)
Drain4
0
10
20
40
50
60
70
5
10
15
20
25
30Transconductance, gfs (S)
Dr30
September 1998
4
Rev 1.400
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