參數(shù)資料
型號(hào)： PHD37N06LT
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： TrenchMOS transistor Logic level FET
中文描述： 37 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, SOT-428, 3 PIN
文件頁(yè)數(shù)： 2/10頁(yè)
文件大小： 79K
代理商： PHD37N06LT
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP37N06LT, PHB37N06LT, PHD37N06LT
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
TYP.
-
MAX.
1.5
UNIT
K/W
SOT78 package, in free air
SOT404 and SOT428 packages, pcb
mounted, minimum footprint
60
50
-
-
K/W
K/W
ESD LIMITING VALUE
SYMBOL PARAMETER
V
C
Electrostatic discharge
capacitor voltage, all pins
CONDITIONS
Human body model (100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)GSS
Gate-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
55
50
10
TYP. MAX. UNIT
-
-
-
-
-
-
V
V
V
T
j
= -55C
I
G
=
±
1 mA;
V
DS
= V
GS
; I
D
= 1 mA
1.0
0.5
-
-
-
-
12
-
-
-
-
-
-
-
1.5
-
-
28
26
-
40
0.02
-
0.05
-
22.5
6
11
2.0
-
2.3
35
32
74
-
1
20
10
500
-
-
-
V
V
V
T
j
= 175C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 5 V; I
D
= 17 A
V
GS
= 10 V; I
D
= 17 A
m
m
m
S
μ
A
μ
A
μ
A
μ
A
nC
nC
nC
T
j
= 175C
g
fs
I
GSS
Forward transconductance
Gate source leakage current V
GS
=
±
5 V; V
DS
= 0 V
V
DS
= 25 V; I
D
= 15 A
T
j
= 175C
I
DSS
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
V
DS
= 55 V; V
GS
= 0 V;
T
j
= 175C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
I
D
= 30 A; V
DD
= 44 V; V
GS
= 5 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
V
DD
= 30 V; I
D
= 25 A;
V
= 5 V; R
= 10
Resistive load
-
-
-
-
-
-
14
77
55
48
3.5
4.5
21
110
80
65
-
-
ns
ns
ns
ns
nH
nH
Measured from tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
1050
205
113
1400
245
150
pF
pF
pF
September 1998
2
Rev 1.400
相關(guān)PDF資料
PDF描述
PHP37N06T TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHD37N06LT,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHD38999/20FB4PN 制造商:ITT Interconnect Solutions 功能描述:Fiber Optics 制造商:ITT Interconnect Solutions 功能描述:PHD38999/20FB4PN / 140270-0003 / FIBER OPTICS
PHD38999/20WB4PN 制造商:ITT Interconnect Solutions 功能描述:PHD38999/20WB4PN / 140273-0003 / Fiber Optics
PHD38999/20WE20SN 制造商:ITT Interconnect Solutions 功能描述:PHD38999/20WE20SN - Bulk
PHD38999/24FB4PN 制造商:ITT Interconnect Solutions 功能描述:PHD38999/24FB4PN / 140271-0003 / Fiber Optics
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