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參數(shù)資料
| 型號： | PHD45N03LTA |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 40 A, 25 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 298K |
| 代理商： | PHD45N03LTA |
Philips Semiconductors
PHP/PHB/PHD45N03LTA
N-channel enhancement mode field-effect transistor
Product data
Rev. 02 — 02 November 2001
2 of 14
9397 750 09023
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
T
j
= 25 to 175
°
C
T
mb
= 25
°
C; V
GS
= 5 V
T
mb
= 25
°
C
Typ
-
-
-
-
13
17.5
22
Max
25
40
65
175
21
24
40
Unit
V
A
W
°
C
m
m
m
V
GS
= 10 V; I
D
= 25 A
V
GS
= 5 V; I
D
= 25 A
V
GS
= 3.5 V; I
D
= 5.2 A
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
V
GSM
gate-source voltage
Limiting values
Conditions
T
j
= 25 to 175
°
C
T
j
= 25 to 175
°
C; R
GS
= 20 k
Min
-
-
-
-
Max
25
25
±
15
±
20
Unit
V
V
V
V
t
p
≤
50
μ
s; pulsed;
duty cycle 25 %; T
j
≤
150
°
C
T
mb
= 25
°
C; V
GS
= 5 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 5 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
D
drain current (DC)
-
-
-
-
55
55
40
30
160
65
+175
+175
A
A
A
W
°
C
°
C
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
AS
non-repetitive avalanche energy
peak drain current
total power dissipation
storage temperature
operating junction temperature
T
mb
= 25
°
C
-
-
40
160
A
A
unclamped inductive load;
I
D
= 40 A; t
p
= 0.1 ms; V
DD
= 15 V;
R
GS
= 50
; V
GS
= 5V; starting T
j
= 25
°
C;
-
60
mJ
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