- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367939 > PHD50N06LT (NXP SEMICONDUCTORS) TrenchMOS transistor Logic level FET PDF資料下載
參數(shù)資料
| 型號： | PHD50N06LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Logic level FET |
| 中文描述： | 50 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SOT-428, 3 PIN |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 80K |
| 代理商： | PHD50N06LT |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP50N06LT, PHB50N06LT, PHD50N06LT
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
TYP.
-
MAX.
1.2
UNIT
K/W
SOT78 package, in free air
SOT404 and SOT428 package, pcb
mounted, minimum footprint
60
50
-
-
K/W
K/W
ESD LIMITING VALUE
SYMBOL PARAMETER
V
C
Electrostatic discharge
capacitor voltage, all pins
CONDITIONS
Human body model (100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)GSS
Gate-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
55
50
10
TYP. MAX. UNIT
-
-
-
-
-
-
V
V
V
T
j
= -55C
I
G
=
±
1 mA;
V
DS
= V
GS
; I
D
= 1 mA
1.0
0.5
-
-
-
-
15
-
-
-
-
-
-
-
1.5
-
-
19
17
-
40
0.02
-
0.05
-
27
4
14
2.0
-
2.3
24
22
50
-
1
20
10
500
-
-
-
V
V
V
T
j
= 175C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 5 V; I
D
= 12.5 A
V
GS
= 10 V; I
D
= 12.5 A
m
m
m
S
μ
A
μ
A
μ
A
μ
A
nC
nC
nC
T
j
= 175C
g
fs
I
GSS
Forward transconductance
Gate source leakage current V
GS
=
±
5 V; V
DS
= 0 V
V
DS
= 25 V; I
D
= 25 A
T
j
= 175C
I
DSS
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
V
DS
= 55 V; V
GS
= 0 V;
T
j
= 175C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
I
D
= 50 A; V
DD
= 44 V; V
GS
= 5 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
V
DD
= 30 V; I
D
= 25 A;
V
= 5 V; R
= 10
Resistive load
-
-
-
-
-
-
30
80
95
40
3.5
4.5
45
130
135
55
-
-
ns
ns
ns
ns
nH
nH
Measured from tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
1500
300
150
2000
360
200
pF
pF
pF
September 1998
2
Rev 1.400
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHP50N06LT | TrenchMOS transistor Logic level FET |
| PHD55N04LT | Triple 1.8V to 6V High-Side MOSFET Drivers; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C |
| PHP55N04LT | TRANSISTOR | MOSFET | N-CHANNEL | 35V V(BR)DSS | 55A I(D) | TO-220AB |
| PHB55N04LT | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| PHB55N03 | TrenchMOS transistor Standard level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHD55N03LT | 制造商:NXP Semiconductors 功能描述: 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, TO-252AA |
| PHD55N03LT/T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR POWER MOSFET D-PAK |
| PHD55N03LTA | 制造商:NXP Semiconductors 功能描述:55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| PHD55N03LTA,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHD55N04LT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 35V V(BR)DSS | 55A I(D) | TO-252AA |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。