參數(shù)資料
型號(hào)： PHE13002AU
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
中文描述： 1.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-251
文件頁數(shù)： 2/8頁
文件大?。?/td> 70K
代理商： PHE13002AU
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13002AU
STATIC CHARACTERISTICS
T
mb
= 25
C unless otherwise specified
SYMBOL
PARAMETER
I
CES
,I
CBO
Collector cut-off current
1
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
C
V
CEO
= V
(300V)
V
= 9 V; I
= 0 A
I
= 0 A; I
C
= 10 mA;
L = 25 mH
I
C
= 1.0 A;I
B
= 0.2 A
I
C
= 1.0 A;I
B
= 0.2 A
I
C
= 1mA; V
= 5 V
I
C
= 100mA; V
= 5 V
I
C
= 1.0 A; V
CE
= 5 V
MIN.
-
-
TYP.
0.14
39
MAX.
100
500
UNIT
μ
A
μ
A
I
CEO
I
EBO
V
CEOsust
Collector cut-off current
1
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
3.7
20
-
100
100
-
μ
A
μ
A
V
300
V
CEsat
V
BEsat
h
FE
h
FE
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
0.27
1.03
23
30
12
1.0
1.3
-
46
19
V
V
17
19
9
DYNAMIC CHARACTERISTICS
T
mb
= 25
C unless otherwise specified
SYMBOL
PARAMETER
Switching times (resistive load)
CONDITIONS
I
Con
= 1.0 A; I
= -I
= 0.2 A;
R
L
= 75 ohms; V
BB2
= 4V;
TYP.
MAX.
UNIT
t
on
t
s
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
0.78
0.91
0.25
1.0
1.22
0.34
μ
s
μ
s
μ
s
I
= 1.0 A; I
Bon
= 0.2 A; L
B
= 1
μ
H;
-V
BB
= 5 V
t
si
t
fi
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
0.55
56
0.74
76
μ
s
ns
I
= 1.0 A; I
Bon
= 0.2 A; L
B
= 1
μ
H;
-V
BB
= 5 V; T
j
C
t
si
t
fi
Turn-off storage time
Turn-off fall time
-
-
1.5
140
μ
s
ns
1
Measured with half sine-wave voltage (curve tracer).
January 2000
2
Rev 1.000
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參數(shù)描述
PHE13003 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
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PHE13003A,126 功能描述:兩極晶體管 - BJT Single NPN 1A 2.1W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PHE13003A,412 功能描述:兩極晶體管 - BJT TRANSISTOR DIFF 700V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PHE13003A126 制造商:NXP Semiconductors 功能描述:NPN POWER TRANSISTOR 400 V 1 A 3-TO-9
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