參數(shù)資料
型號： PHE13003AU
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Silicon Diffused Power Transistor(硅擴散功率型晶體管)
中文描述： 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-251
封裝： PLASTIC, IPAK-3
文件頁數(shù)： 2/7頁
文件大?。?/td> 49K
代理商： PHE13003AU
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13003AU
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
,I
CBO
Collector cut-off current
1
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
CEO
= V
(400V)
V
= 9 V; I
= 0 A
I
= 0 A; I
C
= 10 mA;
L = 25 mH
I
C
= 1.0 A;I
B
= 0.25 A
I
C
= 1.0 A;I
= 0.25 A
I
C
= 100mA; V
= 5 V
I
C
= 1.0 A; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
1.0
5.0
UNIT
mA
mA
I
CEO
I
EBO
V
CEOsust
Collector cut-off current
1
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
-
-
0.1
1
-
mA
mA
V
400
V
CEsat
V
BEsat
h
FE
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
8
5
-
-
-
-
1.0
1.2
40
25
V
V
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (resistive load)
CONDITIONS
I
Con
= 1.0 A; I
= -I
= 0.2 A;
R
L
= 75 ohms; V
BB2
= 4V;
TYP.
MAX.
UNIT
t
on
t
s
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
-
-
-
0.9
4.0
0.7
μ
s
μ
s
μ
s
I
= 1.0 A; I
Bon
= 0.2 A; L
B
= 1
μ
H;
-V
BB
= 5 V
t
s
t
f
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
-
-
2
μ
s
ns
100
I
= 1.0 A; I
Bon
= 0.2 A; L
B
= 1
μ
H;
-V
BB
= 5 V; T
j
t
s
t
f
Turn-off storage time
Turn-off fall time
-
-
4
μ
s
ns
150
1
Measured with half sine-wave voltage (curve tracer).
September 1999
2
Rev 1.000
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