參數(shù)資料
型號: PHM18NQ15T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS standard level FET
中文描述: 19 A, 150 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 6 X 5 MM, 0.85 MM HEIGHT, PLASTIC, QLPAK, HVSON-8
文件頁數(shù): 2/12頁
文件大?。?/td> 91K
代理商: PHM18NQ15T
Philips Semiconductors
PHM18NQ15T
TrenchMOS standard level FET
Product data
Rev. 02 — 20 August 2004
2 of 12
9397 750 13865
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3.
Ordering information
4.
Limiting values
Table 2:
Type number
Ordering information
Package
Name
QLPAK
Description
HVSON8: plastic thermal enhanced very thin small outline package;
no leads; 8 terminals; 6 x 5 x 0.85 mm
Version
SOT685-1
PHM18NQ15T
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
T
j
150
°
C
25
°
C
T
j
150
°
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
55
55
Max
150
150
±
20
19
12
76
62.5
+150
+150
Unit
V
V
V
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
-
-
19
60
A
A
unclamped inductive load; I
D
= 9.9 A;
t
p
= 0.16 ms; V
DD
150 V; V
GS
= 10 V;
starting T
j
= 25
°
C
-
170
mJ
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