參數(shù)資料
型號(hào)： PHN70308
廠(chǎng)商： NXP SEMICONDUCTORS
元件分類(lèi)： 小信號(hào)晶體管
英文描述： N-channel enhancement mode TrenchMOS transistor array(N溝道增強(qiáng)型TrenchMOS晶體管陣列)
中文描述： 5000 mA, 25 V, 7 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AH
封裝： PLASTIC, SSOP-28
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 172K
代理商： PHN70308
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOS transistor array
PHN70308
FEATURES
SYMBOL
QUICK REFERENCE DATA
30 m
isolation transistor
80 m
spindle transistors
TrenchMOS technology
Logic level compatible
Surface mount package
V
DS
= 25 V
I
D
= 5 A
R
DS(ON)
≤
30 m
(V
GS
= 10 V; isolation FET)
R
DS(ON)
≤
80 m
(V
GS
= 10 V; spindle FETs)
GENERAL DESCRIPTION
This product is used to drive high performance, three phase brushless d.c. motors in computer disk drives.
The PHN70308 contains seven, n-channel enhancement mode trenchMOS transistors in a surface mounting plastic
package. Six of the transistors can be configured as a three phase bridge to drive the spindle of a disk drive motor.
The remaining transistor delivers power to the three phase bridge during normal operation. In the event of a power
failure occurring whilst the motor is still spinning, this transistor isolates the computer power supply from the back
emf generated by the motor.
The PHN70308 is supplied in the surface mounting SOT341-1 (SSOP28) package.
PINNING
SOT341-1 (SSOP28)
PIN
DESCRIPTION
PIN
DESCRIPTION
1,3
2
4
5,7
6
8
9,11
10
12
drain 1
source 1
gate 1
drain 2
source 2
gate 2
drain 3
source 3
gate 3
16,17
18
20
21
23
24
26
27
13-15,19,22,25,28
source 4
gate 4
gate 5
source 5
gate 6
source 6
gate 7
source 7
drain 4
D4
D1
D2
D3
S1
S2
S3
G1
G2
G3
G6
G7
G5
G4
S7
S6
S5
S4
isolation FET
1
14
15
28
Top view
May 1999
1
Rev 1.000
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