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參數(shù)資料
| 型號： | PHN70308 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-channel enhancement mode TrenchMOS transistor array(N溝道增強(qiáng)型TrenchMOS晶體管陣列) |
| 中文描述： | 5000 mA, 25 V, 7 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AH |
| 封裝： | PLASTIC, SSOP-28 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 172K |
| 代理商： | PHN70308 |
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOS transistor array
PHN70308
Fig.17. Typical transconductance (isolation FET)
T
j
= 25 C; g
fs
= f(I
D
)
Fig.18. Typical capacitances(spindle FET)
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.19. Typical capacitances(isolation FET)
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.20. Typical turn-on gate-charge characteristics
(spindle FET); V
GS
= f(Q
G
)
Fig.21. Typical turn-on gate-charge characteristics
(isolation FET); V
GS
= f(Q
G
)
Fig.22. Typical reverse diode current (spindle FET)
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
150 C
VDS > ID X RDS(ON)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
1
2
3
Gate char4
5
6
7
8
Gate-source voltage, VGS (V)
ID = 1A
Tj = 25 C
VDD = 20 V
10
100
1000
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
2
4
6
8
10
Gate c12
14
16
18
20
22
24
26
Gate-source voltage, VGS (V)
ID = 1A
Tj = 25 C
VDD = 20 V
100
1000
10000
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
VGS = 0 V
May 1999
7
Rev 1.000
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