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參數(shù)資料
| 型號： | PHN708 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 7 N-channel 80 mohm FET array enhancement mode MOS transistors |
| 中文描述： | 3100 mA, 30 V, 7 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AG |
| 封裝： | PLASTIC, SSOP-24 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 92K |
| 代理商： | PHN708 |
1998 Mar 17
3
Philips Semiconductors
Product specification
7 N-channel 80 m
FET array
enhancement mode MOS transistors
PHN708
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
3.
4.
5.
6.
T
s
is the temperature at the soldering point of the drain lead.
Pulse width and duty cycle limited by maximum junction temperature.
When only one FET dissipates.
When either combination of FETs 1-5, 1-6, 2-5, 2-7, 3-6 or 3-7 dissipate an equal amount of power.
When FET four plus either combination of FETs 1-5, 1-6, 2-5, 2-7, 3-6 or 3-7 dissipate an equal amount of power.
When all seven FETs dissipate an equal amount of power.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
V
GS
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC)
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
1
30
±
20
2.8
3.1
80
1.3
V
V
V
A
m
W
I
D
= 1 mA; V
DS
= V
GS
T
s
= 80
°
C
I
D
= 1.5 A; V
GS
= 10 V
T
s
= 80
°
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per FET
V
DS
V
GS
I
D
I
DM
P
tot
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
55
55
30
±
20
3.1
12.4
1.3
1.13
0.92
0.77
+150
+150
V
V
A
A
W
W
W
W
°
C
°
C
T
s
= 80
°
C; note 1
note 2
T
s
= 80
°
C; note 3
T
s
= 80
°
C; note 4
T
s
= 80
°
C; note 5
T
s
= 80
°
C; note 6
T
stg
T
j
storage temperature
operating junction temperature
Source-drain diode
I
S
I
SM
source current (DC)
peak source current
T
s
= 80
°
C
note 2
1.3
5.2
A
A
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