參數(shù)資料
型號: PHN708
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 7 N-channel 80 mohm FET array enhancement mode MOS transistors
中文描述: 3100 mA, 30 V, 7 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AG
封裝: PLASTIC, SSOP-24
文件頁數(shù): 7/12頁
文件大?。?/td> 92K
代理商: PHN708
1998 Mar 17
7
Philips Semiconductors
Product specification
7 N-channel 80 m
FET array
enhancement mode MOS transistors
PHN708
Fig.6
Gate-source voltage as a function of total
gate charge; typical values.
V
DD
= 15 V; I
D
= 1 A; T
amb
= 25
°
C.
handbook, halfpage
(V)
0
2
QG (nC)
4
6
0
8
6
4
2
MDA792
Fig.7
Output characteristics; typical values.
T
amb
= 25
°
C; t
p
= 80
μ
s;
δ
= 0.
(1) V
GS
= 10 V.
(2) V
GS
= 7.5 V.
(3) V
GS
= 6 V.
(4) V
GS
= 5 V.
(5) V
GS
= 4.5 V.
(6) V
GS
= 4 V.
(7) V
GS
= 3.5 V.
(8) V
GS
= 3 V.
(9) V
GS
= 2.5 V.
handbook, halfpage
ID
(A)
0
(4)
(5)
(6)
12
8
4
0
2
4
10
8
6
MDA790
VDS (V)
(8)
(9)
(1) (2) (3)
(7)
Fig.8 Transfer characteristic; typical values.
V
DS
= 10 V; T
amb
= 25
°
C; t
p
= 80
μ
s;
δ
= 0.
handbook, halfpage
ID
(A)
0
2
VGS (V)
4
6
12
4
0
8
MDA791
Fig.9
Capacitance as a function of drain-source
voltage; typical values.
V
GS
= 0 ; f = 1 MHz; T
j
= 25
°
C.
handbook, halfpage
C
(pF)
0
300
200
100
0
5
10
25
20
15
MDA789
VDS (V)
Crss
Ciss
Coss
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