參數(shù)資料
型號: PHN708
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 7 N-channel 80 mohm FET array enhancement mode MOS transistors
中文描述: 3100 mA, 30 V, 7 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AG
封裝: PLASTIC, SSOP-24
文件頁數(shù): 9/12頁
文件大?。?/td> 92K
代理商: PHN708
1998 Mar 17
9
Philips Semiconductors
Product specification
7 N-channel 80 m
FET array
enhancement mode MOS transistors
PHN708
Fig.12 Temperature coefficient of gate-source
threshold voltage as a function of junction
temperature; typical values.
V
GSth
at V
DS
= V
GS
; I
D
= 1 mA.
k
V
at T
j
GSth
at 25
°
C
V
=
handbook, halfpage
75
k
1
0.8
0.6
25
175
25
75
125
MDA795
Tj (
°
C)
Fig.13 Temperature coefficient of drain-source
on-resistance as a function of junction
temperature; typical values.
R
DSon
at:
(1) V
GS
= 10 V; I
D
= 1.5 A.
(2) V
GS
= 4.5 V; I
D
= 0.75 A.
k
R
at T
DSon
at 25
°
C
R
=
handbook, halfpage
75
k
1.4
1
0.6
25
175
25
75
(1)
(2)
125
MDA796
Tj (
°
C)
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