參數(shù)資料
型號: PHN708
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 7 N-channel 80 mohm FET array enhancement mode MOS transistors
中文描述: 3100 mA, 30 V, 7 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AG
封裝: PLASTIC, SSOP-24
文件頁數(shù): 4/12頁
文件大?。?/td> 92K
代理商: PHN708
1998 Mar 17
4
Philips Semiconductors
Product specification
7 N-channel 80 m
FET array
enhancement mode MOS transistors
PHN708
Fig.2 Power derating curve.
handbook, halfpage
(W)
1.6
0
50
100
Ts (
°
C)
200
0
150
1.2
0.8
0.4
MDA787
Fig.3 SOAR.
δ
= 0.01; T
s
= 80
°
C.
(1) R
DSon
limitation.
handbook, halfpage
ID
(A)
MDA788
2
10
1
10
10
1
2
1
10
1
10
2
10
tp
T
P
t
tp
T
δ
=
100 ms
1 ms
10 ms
DC
(1)
tp =
100
μ
s
VDS (V)
THERMAL CHARACTERISTICS
Notes
1.
2.
3.
4.
When only one FET dissipates.
When either combination of FETs 1-5, 1-6, 2-5, 2-7, 3-6 or 3-7 dissipate an equal amount of power.
When FET four plus either combination of FETs 1-5, 1-6, 2-5, 2-7, 3-6 or 3-7 dissipate an equal amount of power.
When all seven FETs dissipate an equal amount of power.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Per FET
R
th j-s
thermal resistance from junction to soldering point
note 1
note 2
note 3
note 4
53
62
76
91
K/W
K/W
K/W
K/W
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