參數(shù)資料
型號(hào)： PHP101NQ03LT
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： TrenchMOS logic level FET
中文描述： 75 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 2/13頁
文件大?。?/td> 279K
代理商： PHP101NQ03LT
Philips Semiconductors
PHP/PHU101NQ03LT
TrenchMOS logic level FET
Product data
Rev. 02 — 25 February 2003
2 of 13
9397 750 10927
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
25
°
C
≤
T
j
≤
175
°
C
T
mb
= 25
°
C; V
GS
= 5 V
T
mb
= 25
°
C
Typ
-
-
-
-
4.5
5.8
Max
30
75
166
175
5.5
7.0
Unit
V
A
W
°
C
m
m
T
j
= 25
°
C; V
GS
= 10 V; I
D
= 25 A
T
j
= 25
°
C; V
GS
= 5 V; I
D
= 25 A
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
V
GSM
gate-source voltage
Limiting values
Conditions
25
°
C
≤
T
j
≤
175
°
C
25
°
C
≤
T
j
≤
175
°
C; R
GS
= 20 k
Min
-
-
-
-
Max
30
30
±
20
±
25
Unit
V
V
V
V
t
p
≤
50
μ
s; pulsed;
duty cycle 25%; T
j
≤
150
°
C
T
mb
= 25
°
C; V
GS
= 5 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 5 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
D
drain current (DC)
-
-
-
-
55
55
75
75
240
166
+175
+175
A
A
A
W
°
C
°
C
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
-
-
75
240
A
A
unclamped inductive load; I
D
= 43 A;
t
p
= 0.19 ms; V
DD
≤
15 V; R
GS
= 50
;
V
GS
= 10 V; starting T
j
= 25
°
C
-
185
mJ
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