參數(shù)資料
型號(hào): PHP50N06LT
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: TrenchMOS transistor Logic level FET
中文描述: 50 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù): 4/10頁(yè)
文件大?。?/td> 80K
代理商: PHP50N06LT
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP50N06LT, PHB50N06LT, PHD50N06LT
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
1
10
100
1000
1
10
100
1000
7524-55
VDS / V
ID / A
RDS(ON) = VDS / ID
tp = 10 us
100 us
1 ms
10 ms
100 ms
DC
15
20
25
30
35
40
10
15
20
25
30
35
40
ID/A
45
50
55
60
65
70
75
RDS(ON)/mOhm
VGS/V =
4
4.2
4.4
4.6
4.8
5
10us
1ms
0.1s
10s
pulse width, tp (s)
Transient thermal impedance, Zth (K/W)
10
1
0.1
0.01
0.001
0
0.5
0.2
0.1
0.05
0.02
D =
t
p
t
p
T
T
P
t
D
0
1
2
3
4
5
6
7
0
20
40
60
80
100
ID/A
VGS/V
Tj/C = 175
25
0
2
6
8
10
0
20
40
60
80
100
10
8
6
VGS = 5.0 V
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
Drain current, ID (A)
Drain-4
0
20
40
Drain current, ID (A)
60
80
100
5
10
15
20
25
30
35
40
Transconductance, gfs (S)
September 1998
4
Rev 1.400
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