參數(shù)資料
型號: PIC16F84AT-20E/SO
廠商: Microchip Technology
文件頁數(shù): 47/81頁
文件大小: 0K
描述: IC MCU CMOS 20MHZ 1K FLSH 18SOIC
標(biāo)準包裝: 1,100
系列: PIC® 16F
核心處理器: PIC
芯體尺寸: 8-位
速度: 20MHz
外圍設(shè)備: POR,WDT
輸入/輸出數(shù): 13
程序存儲器容量: 1.75KB(1K x 14)
程序存儲器類型: 閃存
EEPROM 大?。?/td> 64 x 8
RAM 容量: 68 x 8
電壓 - 電源 (Vcc/Vdd): 4 V ~ 5.5 V
振蕩器型: 外部
工作溫度: -40°C ~ 125°C
封裝/外殼: 18-SOIC(0.295",7.50mm 寬)
包裝: 帶卷 (TR)
2001 Microchip Technology Inc.
DS35007B-page 49
PIC16F84A
9.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Ambient temperature under bias............................................................................................................ .-55
°C to +125°C
Storage temperature .............................................................................................................................. -65
°C to +150°C
Voltage on any pin with respect to VSS (except VDD, MCLR, and RA4) ......................................... -0.3V to (VDD + 0.3V)
Voltage on VDD with respect to VSS ........................................................................................................... -0.3 to +7.5V
Voltage on MCLR with respect to VSS(1) .......................................................................................................-0.3 to +14V
Voltage on RA4 with respect to VSS ........................................................................................................... -0.3 to +8.5V
Total power dissipation(2) ..................................................................................................................................... 800 mW
Maximum current out of VSS pin ...........................................................................................................................150 mA
Maximum current into VDD pin .............................................................................................................................. 100 mA
Input clamp current, IIK (VI < 0 or VI > VDD)
..................................................................................................................... ± 20 mA
Output clamp current, IOK (VO < 0 or VO > VDD)
............................................................................................................. ± 20 mA
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin .................................................................................................... 25 mA
Maximum current sunk by PORTA ..........................................................................................................................80 mA
Maximum current sourced by PORTA..................................................................................................................... 50 mA
Maximum current sunk by PORTB........................................................................................................................ 150 mA
Maximum current sourced by PORTB .................................................................................................................. 100 mA
Note 1: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.
Thus, a series resistor of 50-100
should be used when applying a “l(fā)ow” level to the MCLR pin rather than
pulling this pin directly to VSS.
2: Power dissipation is calculated as follows: Pdis = VDD x {IDD -
∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL).
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above
those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
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