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參數(shù)資料
| 型號： | PIC18F2321T-I/SS |
| 廠商： | Microchip Technology |
| 文件頁數(shù)： | 95/110頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC PIC MCU FLASH 4KX16 28SSOP |
| 標準包裝： | 2,100 |
| 系列： | PIC® 18F |
| 核心處理器： | PIC |
| 芯體尺寸： | 8-位 |
| 速度： | 40MHz |
| 連通性： | I²C，SPI，UART/USART |
| 外圍設(shè)備： | 欠壓檢測/復(fù)位，HLVD，POR，PWM，WDT |
| 輸入/輸出數(shù)： | 25 |
| 程序存儲器容量： | 8KB（4K x 16） |
| 程序存儲器類型： | 閃存 |
| EEPROM 大小： | 256 x 8 |
| RAM 容量： | 512 x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 4.2 V ~ 5.5 V |
| 數(shù)據(jù)轉(zhuǎn)換器： | A/D 10x10b |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 28-SSOP（0.209"，5.30mm 寬） |
| 包裝： | 帶卷 (TR) |
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2009 Microchip Technology Inc.
DS39689F-page 85
PIC18F2221/2321/4221/4321 FAMILY
7.5
Writing to Flash Program Memory
The minimum programming block is 4 words or 8 bytes.
Word or byte programming is not supported.
Table writes are used internally to load the holding
registers needed to program the Flash memory. There
are 8 holding registers used by the table writes for
programming.
Since the Table Latch (TABLAT) is only a single byte,
the TBLWT instruction may need to be executed 8 times
for each programming operation. All of the table write
operations will essentially be short writes because only
the holding registers are written. At the end of updating
the 8 holding registers, the EECON1 register must be
written to in order to start the programming operation with
a long write.
The long write is necessary for programming the
internal Flash. Instruction execution is halted while in a
long write cycle. The long write will be terminated by
the internal programming timer.
The EEPROM on-chip timer controls the write time.
The write/erase voltages are generated by an on-chip
charge pump, rated to operate over the voltage range
of the device.
FIGURE 7-5:
TABLE WRITES TO FLASH PROGRAM MEMORY
7.5.1
FLASH PROGRAM MEMORY
WRITE SEQUENCE
The sequence of events for programming an internal
program memory location should be:
1.
Read 64 bytes into RAM.
2.
Update data values in RAM as necessary.
3.
Load Table Pointer register with address being
erased.
4.
Execute the row erase procedure.
5.
Load Table Pointer register with address of first
byte being written.
6.
Write the 8 bytes into the holding registers.
7.
Set the EECON1 register for the write operation:
set EEPGD bit to point to program memory;
clear the CFGS bit to access program memory;
set WREN to enable byte writes.
8.
Disable interrupts.
9.
Write 55h to EECON2.
10. Write 0AAh to EECON2.
11. Set the WR bit. This will begin the write cycle.
12. The CPU will stall for duration of the write (about
2 ms using internal timer).
13. Repeat from step 5 seven more times.
14. Re-enable interrupts.
15. Verify the memory (table read).
This procedure will require about 18 ms to update one
row of 64 bytes of memory. An example of the required
code is given in Example 7-3.
Note:
The default value of the holding registers on
device Resets and after write operations is
FFh. A write of FFh to a holding register
does not modify that byte. This means that
individual bytes of program memory may be
modified, provided that the modification
does not attempt to change any bit from a
‘0’ to a ‘1’. When modifying individual bytes,
it is not necessary to load all 8 holding
registers before executing a write operation.
TABLAT
TBLPTR = xxxxx7
TBLPTR = xxxxx1
TBLPTR = xxxxx0
Write Register
TBLPTR = xxxxx2
Program Memory
Holding Register
8
Note:
Before setting the WR bit, the Table
Pointer address needs to be within the
intended address range of the 8 bytes in
the holding register.
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| PIC18F2331-E/ML | 功能描述:8位微控制器 -MCU 8KB 768 RAM 22 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
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| PIC18F2331-E/SP | 功能描述:8位微控制器 -MCU 8KB 768 RAM 22 I/O RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
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