參數(shù)資料
型號(hào): PMWD16UN
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: Dual N-channel uTrenchMOS ultra low level FET
中文描述: 6000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153
封裝: PLASTIC, TSSOP-8
文件頁(yè)數(shù): 10/12頁(yè)
文件大?。?/td> 94K
代理商: PMWD16UN
9397 750 14724
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 24 March 2005
10 of 12
Philips Semiconductors
PMWD16UN
Dual N-channel
μ
TrenchMOS ultra low level FET
8.
Revision history
Table 6:
Document ID
PMWD16UN_2
Modifications:
Revision history
Release date
20050324
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
I
D
and P
tot
data revised in
Section 1.4 “Quick reference data”
.
I
D
, I
DM
, P
tot
, I
S
and I
SM
data revised in
Table 3 “Limiting values”
.
Figure 3
revised in
Section 4 “Limiting values”
.
R
th(j-sp)
data revised in
Table 4 “Thermal characteristics”
.
Figure 4
revised in
Section 5 “Thermal characteristics”
Figure 5
,
7
and
12
revised in
Section 6 “Characteristics”
20021220
Product data
-
Data sheet status
Product data sheet
Change notice Doc. number
-
Supersedes
PMWD16UN-01
9397 750 14724
PMWD16UN-01
9397 750 10831
-
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