參數(shù)資料
型號: PMWD16UN
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: Dual N-channel uTrenchMOS ultra low level FET
中文描述: 6000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153
封裝: PLASTIC, TSSOP-8
文件頁數(shù): 3/12頁
文件大?。?/td> 94K
代理商: PMWD16UN
9397 750 14724
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 24 March 2005
3 of 12
Philips Semiconductors
PMWD16UN
Dual N-channel
μ
TrenchMOS ultra low level FET
V
GS
4.5 V
Fig 1.
Normalized total power dissipation as a
function of solder point temperature
Fig 2.
Normalized continuous drain current as a
function of solder point temperature
T
sp
= 25
°
C; I
DM
is single pulse
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Fig 3.
03aa17
0
40
80
120
0
50
100
150
200
T
sp
(
°
C)
P
der
(%)
03aa25
0
40
80
120
0
50
100
150
200
T
sp
(
°
C)
I
der
(%)
P
der
P
tot 25 C
)
------------------------
100
%
×
=
I
der
I
D 25 C
)
--------------------
100
%
×
=
003aaa359
10
-2
10
-1
1
10
10
2
10
-1
1
10
10
2
V
DS
(V)
I
D
(A)
DC
100 ms
10 ms
Limit R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10
μ
s
1 s
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