參數資料
型號: PMWD16UN
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: Dual N-channel uTrenchMOS ultra low level FET
中文描述: 6000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153
封裝: PLASTIC, TSSOP-8
文件頁數: 7/12頁
文件大?。?/td> 94K
代理商: PMWD16UN
9397 750 14724
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 24 March 2005
7 of 12
Philips Semiconductors
PMWD16UN
Dual N-channel
μ
TrenchMOS ultra low level FET
I
D
= 1 mA; V
DS
= V
GS
Gate-source threshold voltage as a function of
junction temperature
T
j
= 25
°
C; V
DS
= 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 9.
V
GS
= 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
T
j
= 25
°
C and 150
°
C; V
GS
= 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
03aj65
0
0.3
0.6
0.9
1.2
-60
0
60
120
180
(V)
min
typ
max
T
j
(
°
C)
V
GS(th)
03aj64
10
6
10
5
10
4
10
3
0
0.2
0.4
0.6
0.8
1
V
GS
(V)
I
D
(A)
min
typ
max
003aaa271
10
2
10
3
10
4
10
-1
1
10
10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
003aaa272
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
V
SD
(V)
I
S
(A)
T
j
= 25
°
C
150
°
C
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