參數(shù)資料
型號: PSD813F1A-90MT
廠商: 意法半導(dǎo)體
英文描述: Flash In-System Programmable (ISP) Peripherals for 8-bit MCUs, 5V
中文描述: Flash在系統(tǒng)可編程(ISP)的周邊8位MCU,5V的
文件頁數(shù): 94/110頁
文件大小: 1685K
代理商: PSD813F1A-90MT
PSD813F1
94/110
Table 60. Flash Program, WRITE and Erase Times (3V devices)
Symbol
Parameter
Note: 1. Programmed to all zero before erase.
2. The polling status, DQ7, is valid t
Q7VQV
time units before the data byte, DQ0-DQ7, is valid for reading.
Table 61. EEPROM WRITE Times (5V devices)
Note: 1. If the maximum time has elapsed between successive WRITE cycles to an EEPROM page, the transfer of this data to EEPROM
cells will begin. Also, bytes cannot be written (loaded) to a page any faster than the indicated minimum type.
2. These specifications are for writing a page to EEPROM cells.
Table 62. EEPROM WRITE Times (3V devices)
Note: 1. If the maximum time has elapsed between successive WRITE cycles to an EEPROM page, the transfer of this data to EEPROM
cells will begin. Also, bytes cannot be written (loaded) to a page any faster than the indicated minimum type.
2. These specifications are for writing a page to EEPROM cells.
Min.
Typ.
Max.
Unit
Flash Program
8.5
s
Flash Bulk Erase
1
(pre-programmed)
3
30
s
Flash Bulk Erase (not pre-programmed)
10
s
t
WHQV3
Sector Erase (pre-programmed)
1
30
s
t
WHQV2
Sector Erase (not pre-programmed)
2.2
s
t
WHQV1
Byte Program
14
1200
μs
Program / Erase Cycles (per Sector)
100,000
cycles
t
WHWLO
Sector Erase Time-Out
100
μs
t
Q7VQV
DQ7 Valid to Output (DQ7-DQ0) Valid (Data Polling)
2
30
ns
Symbol
Parameter
Min
Typ
Max
Unit
t
EEHWL
Write Protect After Power Up
5
ms
t
BLC
EEPROM Byte Load Cycle Timing (Note
1
)
0.2
120
μs
t
WCB
EEPROM Byte Write Cycle Time
4
10
ms
t
WCP
EEPROM Page Write Cycle Time (Note
2
)
6
30
ms
Program/Erase Cycles (Per Sector)
10,000
cycles
Symbol
Parameter
Min
Typ
Max
Unit
t
EEHWL
Write Protect After Power Up
5
ms
t
BLC
EEPROM Byte Load Cycle Timing (Note
1
)
0.2
120
μs
t
WCB
EEPROM Byte Write Cycle Time
4
10
ms
t
WCP
EEPROM Page Write Cycle Time (Note
2
)
6
30
ms
Program/Erase Cycles (Per Sector)
10,000
cycles
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