參數資料
型號: PSD813F4V
英文描述: -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package; A IRHNA597260 with Standard Packaging
中文描述: Flash在系統(tǒng)編程(ISP)外設的8位微控制器
文件頁數: 93/103頁
文件大小: 1185K
代理商: PSD813F4V
93/103
PSD81XFX, PSD83XF2, PSD85XF2
Figure 46. Reset (RESET) Timing
Table 64. Reset (RESET) Timing (5V devices)
Note: 1. Reset (RESET) does not reset Flash memory Program or Erase cycles.
2. Warm reset aborts Flash memory Program or Erase cycles, and puts the device in READ Mode.
Table 65. Reset (RESET) Timing (3V devices)
Note: 1. Reset (RESET) does not reset Flash memory Program or Erase cycles.
2. Warm reset aborts Flash memory Program or Erase cycles, and puts the device in READ Mode.
Table 66. V
STBYON
Timing (5V devices)
Symbol
Note: 1. V
STBYON
timing is measured at V
CC
ramp rate of 2 ms.
Table 67. V
STBYON
Timing (3V devices)
Symbol
Note: 1. V
STBYON
timing is measured at V
CC
ramp rate of 2 ms.
Symbol
Parameter
Conditions
Min
Max
Unit
t
NLNH
RESET Active Low Time
1
150
ns
t
NLNH–PO
Power On Reset Active Low Time
1
ms
t
NLNH–A
Warm Reset (on the PSD834Fx)
2
25
μ
s
t
OPR
RESET High to Operational Device
120
ns
Symbol
Parameter
Conditions
Min
Max
Unit
t
NLNH
RESET Active Low Time
1
300
ns
t
NLNH–PO
Power On Reset Active Low Time
1
ms
t
NLNH–A
Warm Reset (on the PSD834Fx)
2
25
μ
s
t
OPR
RESET High to Operational Device
300
ns
Parameter
Conditions
Min
Typ
Max
Unit
t
BVBH
V
STBY
Detection to V
STBYON
Output High
(Note
1
)
20
μs
t
BXBL
V
STBY
Off Detection to V
STBYON
Output
Low
(Note
1
)
20
μs
Parameter
Conditions
Min
Typ
Max
Unit
t
BVBH
V
STBY
Detection to V
STBYON
Output High
(Note
1
)
20
μs
t
BXBL
V
STBY
Off Detection to V
STBYON
Output
Low
(Note
1
)
20
μs
tNLNH-PO
Power-On Reset
tOPR
AI02866b
RESET
tNLNH
tNLNH-A
Warm Reset
tOPR
V
CC
V
CC
(min)
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