參數(shù)資料
型號: PTF210301
廠商: INFINEON TECHNOLOGIES AG
英文描述: LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
中文描述: LDMOS射頻功率場效應晶體管30瓦,二一一〇年至2170年兆赫
文件頁數(shù): 7/8頁
文件大小: 337K
代理商: PTF210301
Data Sheet
7
2003-12-22
PTF210301
Ordering Information
Type
PTF210301A
PTF210301E
Package Outline
20265
30265
Package Description
Standard ceramic, flange
Thermally enhanced, flange
Marking
PTF210301A
PTF210301E
Package Outline Specifications
Package 20265, Package 30265
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
20.31
[.800]
10.16± 0.25
[.400± .010]
2X 2.59± 0.38
[.107 ± .015]
FLANGE 9.78
[.385]
2x 7.11
[.280]
7.11
[.280]
15.23
[.600]
4x 1.52
[.060]
CL
CL
(45° X 2.03
[.080])
S
D
G
2X R1.60
[.063]
LID 10.16± 0.25
[.400± .010]
0.0381 [.0015] -A-
3.48± 0.38
[.137± .015]
1.02
[.040]
0.51
[.020]
SPH 1.57
[.062]
15.60± 0.51
[.614± .020]
ERA-H-30265-2-1-2303
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate.
4. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]
相關PDF資料
PDF描述
PTF210301A LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
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相關代理商/技術參數(shù)
參數(shù)描述
PTF210301A 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
PTF210301E 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
PTF210451 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
PTF210451E 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz
PTF210451E V1 功能描述:射頻MOSFET電源晶體管 TRANS MOSFET N-CH 65V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray