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參數(shù)資料
| 型號： | PTF210301A |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz |
| 中文描述： | LDMOS射頻功率場效應(yīng)晶體管30瓦，二一一〇年至2170年兆赫 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 337K |
| 代理商： | PTF210301A |
Data Sheet
1
2003-12-22
PTF210301A
Package 20265
PTF210301E
Package 30265
PTF210301
Description
The PTF210301 is a 30 W, internally matched
GOLDMOS
FET intended
for WCDMA applications from 2110 to 2170 MHz. Full gold metallization
ensures excellent device lifetime and reliability.
Features
Broadband internal matching
Typical two–carrier WCDMA performance
- Average output power = 7.0 W
- Gain = 16 dB
- Efficiency = 25%
- IM3 = –37 dBc
Typical CW performance
- Output power at P–1dB = 36 W
- Gain = 15 dB
- Efficiency = 53%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
30 W (CW) output power
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 380 mA, P
OUT
= 36.5 dBm
f
1
= 2140 MHz, f
2
= 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8
dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Units
Intermodulation Distortion
IMD
—
–44
—
dBc
Gain
Drain Efficiency
G
ps
h
D
—
—
16
20
—
—
dB
%
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 380 mA, P
OUT
= 9 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
η
D
IMD
Min
14.5
15
—
Typ
16
18
–47
Max
—
—
–42
Units
dB
%
dBc
LDMOS RF Power Field Effect Transistor
30 W, 2110–2170 MHz
Two–Carrier WCDMA Drive–Up
f = 2140 MHz, 3GPP WCDMA Signal, P/A R = 8 dB,
10 MHz Carrier Spacing, V
DD
= 28 V, I
DQ
= 380 mA
-55
-50
-45
-40
-35
-30
-25
30
32
Average Output Power (dBm)
34
36
38
40
I
0
5
10
15
20
25
30
D
ACPR
Efficiency
IM3
ESD:
Electrostatic discharge sensitive device — observe handling precautions!
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF210301E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz |
| PTF210451 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz |
| PTF210451E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz |
| PTF210451E V1 | 功能描述:射頻MOSFET電源晶體管 TRANS MOSFET N-CH 65V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PTF210451F | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz |
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