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參數(shù)資料
| 型號： | PTF210301A |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz |
| 中文描述： | LDMOS射頻功率場效應(yīng)晶體管30瓦，二一一〇年至2170年兆赫 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 337K |
| 代理商： | PTF210301A |
Data Sheet
2
2003-12-22
PTF210301
DC Characteristics
at T
CASE
= 25°C unless otherwise indicated
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
DS
= 10 μA
V
(BR)DSS
65
—
—
V
Drain Leakage Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
—
—
1.0
μA
On–State Resistance
V
GS
= 10 V, V
DS
= 0.1 V
R
DS(on)
—
0.26
—
Operating Gate Voltage
V
DS
= 28 V, I
DQ
= 380 mA
V
GS
2.5
3.2
4
V
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0 V
I
GSS
—
—
1.0
μA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
V
Gate–Source Voltage
V
GS
–0.5 to +12
V
Junction Temperature
T
J
200
°C
Total Device Dissipation
Above 25°C derate by
PTF210301A
P
D
116
0.67
W
W/°C
Total Device Dissipation
Above 25°C derate by
PTF210301E
P
D
145
0.83
W
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance
(T
CASE
= 70°C, 30 W CW)
PTF210301A
R
θ
JC
R
θ
JC
1.5
°C/W
PTF210301E
1.2
°C/W
Broadband Performance
V
DD
= 28 V, I
DQ
= 380 mA, P
OUT
= 39.5 dBm
10
15
20
25
30
35
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
G
-25
-20
-15
-10
-5
0
I
Gain
Efficiency
Return Loss
Power Sweep, CW Conditions
V
DD
= 28 V, I
DQ
= 380 mA, f = 2170 MHz
13
14
15
16
17
18
0
10
20
30
40
Output Power (W)
G
5
15
25
35
45
55
D
Gain
Efficiency
Typical Performance
(data taken in a production test fixture)
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相關(guān)代理商/技術(shù)參數(shù) |
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| PTF210301E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz |
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| PTF210451E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz |
| PTF210451E V1 | 功能描述:射頻MOSFET電源晶體管 TRANS MOSFET N-CH 65V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| PTF210451F | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz |
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