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參數(shù)資料
| 型號： | PTF210901E |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz |
| 中文描述： | LDMOS射頻功率場效應晶體管90瓦，二一一〇年至2170年兆赫 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 266K |
| 代理商： | PTF210901E |
Data Sheet
3
2004-01-16
PTF210901
Intermodulation Distortion vs. Output Power
for selected currents
V
DD
= 28 V, f = 2140 MHz, tone spacing = 1 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
37
39
41
43
45
47
49
51
Output Power (dBm), PEP
I
0.75 A
0.85 A
0.95 A
1.05 A
1.15 A
Intermodulation Distortion Products
vs. Tone Spacing
V
DD
= 28 V, I
DQ
= 1050 mA, P
OUT
= 90 W PEP,
f = 2140 MHz
-60
-55
-50
-45
-40
-35
-30
-25
-20
0
10
20
30
Tone Spacing (MHz)
I
3rd Order
5th Order
7th Order
Single–Carrier WCDMA Drive–Up
V
DD
= 28 V, I
DQ
= 1050 mA, f = 2140 MHz,
3GPP WCDMA signal, Test Model 1 w/ 16 DPCH 67%
clipping, P/A R = 8.7 dB, 3.84 MHz BW
30
0
5
10
15
20
25
34
35
36
37 38
39
40 41
42
43
44
Output Power (dBm), Avg.
D
G
-60
-55
-50
-45
-40
-35
-30
A
Drain Efficiency
Gain
ACPR Low
ACPR Up
Two–Tone Drive–Up
V
DD
= 28 V, I
DQ
= 1050 mA, f = 2140 MHz,
tone spacing = 1 MHz
0
5
10
15
20
25
30
35
40
45
39
41
43
45
47
49
51
Output Power (dBm), PEP
D
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
I
IM5
IM7
Efficiency
IM3
Typical Performance
(cont.)
相關PDF資料 |
PDF描述 |
|---|---|
| PTF211301 | LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz |
| PTF211301A | LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz |
| PTF211802 | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| PTF211802A | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| PTF211802E | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PTF211301 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz |
| PTF211301A | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz |
| PTF211802 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| PTF211802A | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| PTF211802E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
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