參數(shù)資料
型號: Q67100-Q2195
廠商: SIEMENS AG
英文描述: 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
中文描述: 3.3 16米x 64位江戶內(nèi)存3.3V的16米x 72位江戶記憶體模組
文件頁數(shù): 31/53頁
文件大小: 418K
代理商: Q67100-Q2195
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
30
9.2 AC Parameters for a Read Timing
AC2
t
LZ
Hi-Z
DQ
Activate
Command
Bank A
Read with
Auto Precharge
Bank A
Command
DQM
Addr.
AP
t
RCD
t
t
AS
RAx
RAx
t
AH
CAx
RRD
t
Command
Bank B
Read with
Auto Precharge
Activate
Command
Bank B
Ax1
Ax0
Bx0
Activate
Command
Bank A
SPT03911
Bx1
t
AC2
OH
t
HZ
t
t
RAS
RC
t
RBx
RBx
RBx
HZ
t
RAy
RAy
T5
t
t
BS
WE
CAS
RAS
t
CS
CKE
CKS
t
CH
t
t
CS
CH
CL
CK2
CLK
T0
T1
T2
T3
T4
Precharge
Bank A
Begin Auto
Precharge
Bank B
Begin Auto
t
CKH
Burst Length = 2, CAS Latency = 2
T6
T7
T8
T10
T9
T11
T13
T12
RP
t
Precharge
Command
Bank A
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參數(shù)描述
Q67100-Q2245 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
Q67100-Q2246 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
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