參數(shù)資料
型號(hào): Q67100-Q2195
廠商: SIEMENS AG
英文描述: 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
中文描述: 3.3 16米x 64位江戶內(nèi)存3.3V的16米x 72位江戶記憶體模組
文件頁(yè)數(shù): 46/53頁(yè)
文件大?。?/td> 418K
代理商: Q67100-Q2195
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
45
18.2 CAS Latency = 3
Activate
Command
Bank A
Addr.
DQM
DQ
AP
BS
Read
Command
Bank B
Command
Bank B
Activate
Hi-Z
Bx1
Bx0
CBx
RBx
RCD
t
RBx
t
AC3
Activate
Command
Bank B
Bx6
Bank A
Command
Read
Bx4
Bx3
Bx2
Bx5
Bank B
Precharge
Command
Ax0
Bx7
Ax2
Ax1
RAx
CAx
RAx
RP
t
RBy
RBy
Precharge
Command
Bank A
Ax7
Read
Command
Bank B
Ax5
Ax4
Ax3
Ax6
SPT03926
By0
CBy
T7
WE
CAS
RAS
CS
CKE
CLK
High
CK3
t
T0
T1
T2
T3
T4
T6
T5
T16
T8
T9
T10
T11
T14
T12
T13
T15
Burst Length = 8, CAS Latency = 3
T18
T17
T19
T20
T21 T22
相關(guān)PDF資料
PDF描述
Q67100-Q2245 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
Q67100-H3493 The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
Q67100-H3494 The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
Q67100-H3495 The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
Q67100-H3260 NONVOLATILE MEMORY 8-KBIT EPROM WITH IC BUS INTERFACE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q67100-Q2245 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
Q67100-Q2246 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
Q67100-Q2330 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 32-Bit EDO-DRAM Module
Q67100-Q2366 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 36-Bit EDO - DRAM Module
Q67100-Q2367 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 36-Bit EDO - DRAM Module