參數(shù)資料
型號: Q67100-Q2195
廠商: SIEMENS AG
英文描述: 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
中文描述: 3.3 16米x 64位江戶內(nèi)存3.3V的16米x 72位江戶記憶體模組
文件頁數(shù): 36/53頁
文件大?。?/td> 418K
代理商: Q67100-Q2195
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
35
12.3 Clock Suspension During Burst Write CAS Latency = 2
Bank A
DQM
Addr.
DQ
AP
BS
DAx0
Command
Write
Activate
Command
Bank A
Hi-Z
Clock
Suspend
Clock
Suspend
2 Cycles
1 Cycle
DAx1
CAx
RAx
RAx
DAx3
Clock
Suspend
3 Cycles
DAx2
SPT03916
T7
WE
CAS
RAS
CS
CKE
CLK
CK2
t
T0
T1
T2
T3
T4
T6
T5
T16
T8
T9
T10
T11
T14
T12
T13
T15
Burst Length = 4, CAS Latency = 2
T18
T17
T19
T20
T21 T22
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q67100-Q2245 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
Q67100-Q2246 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
Q67100-Q2330 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 32-Bit EDO-DRAM Module
Q67100-Q2366 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 36-Bit EDO - DRAM Module
Q67100-Q2367 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 36-Bit EDO - DRAM Module