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參數(shù)資料
| 型號： | QS5U21 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Small switching (?20V, ?1.5A) |
| 中文描述： | 小開關(guān)（？20V的，？1.5A的） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 64K |
| 代理商： | QS5U21 |
QS5U21
Transistor
3/4
z
Electrical characteristic curves
Fig.1 Typical Transfer Characteristics
0
0.5
1.0
Gate
Source Voltage
:
V
GS
[
V
]
0.001
0.1
1
0.01
10
1.5
D
I
D
2.0
2.5
3.0
3.5
4.0
Ta
=
125
°
C
75
°
C
25
°
C
20
°
C
V
DS
=
10V
Pulsed
Fig.2 Static Drain
Source On
State
Resistance
0.1
1
10
100
1000
10
Drain Current
:
I
D
[
A
]
S
S
S
75 C
Ta=125 C
R
D
(
o
)
m
vs.Drain Current
V
GS
=
4.5V
Pulsed
Fig.3 Static Drain
Source On
State
Resistance
0.1
1
10
100
1000
10
Drain Current
:
I
D
[
A
]
S
S
S
R
D
(
o
)
m
vs.Drain Current
V
GS
=
4V
Pulsed
Ta=175 C
25 C
Fig.4 Static Drain
Source On
State
Resistance vs.Drain
Current
0.1
1
10
100
1000
10
Drain Current
:
I
D
[
A
]
S
S
S
Ta=175 C
25 C
R
D
(
o
)
m
V
GS
=
2.5V
Pulsed
10
0
12
8
4
2
6
0
S
S
S
Gate
Source Voltage
:
V
GS
[
V
]
Fig.5 Static Drain
Source On
State
vs.Gate
Source Voltage
Resistance
50
100
150
200
250
300
350
400
I
D=
0
.
75A
1
5A
R
D
(
o
)
[
]
Ta=25 C
Pulsed
Fig.6 Static Drain
Source On
State
Resistance
vs.Drain Current
0.1
1
10
100
1000
10
Drain Current
:
I
D
[
A
]
S
S
R
D
(
o
)
m
VGS=
2
.
5V
4
.
0V
4
.
5V
Ta=25 C
0
0.5
1.0
1.5
Source
Drain Voltage
:
V
SD
[
V
]
Fig.7 Reverse Drain Current
vs. Source-Drain Current
0.01
R
:
I
D
[
A
]
0.1
10
1
2.0
Ta=175 C
25 C
V
GS
=0V
Pulsed
0.01
0.1
1
10
100
Drain
Source Voltage
:
V
DS
[
V
]
Fig.8 Typical Capactitance
vs.Drain
Source Voltage
10
100
10000
1000
C
[
p
]
Ciss
Coss
Crss
Ta==0V
V
GS
1
0.1
1
10
Drain Current
:
I
D
[
A
]
Fig.9 Switching Characteristics
10
1000
100
td
(
off
)
td
(
on
)
tr
tf
S
[
n
]
Ta==
V
DD
15V
V
GS
=
4.5V
R
G
=10
Pulsed
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