參數(shù)資料
型號: QS5U21
廠商: Rohm CO.,LTD.
英文描述: Small switching (?20V, ?1.5A)
中文描述: 小開關(guān)(?20V的,?1.5A的)
文件頁數(shù): 2/4頁
文件大?。?/td> 64K
代理商: QS5U21
QS5U21
Transistor
2/4
z
Electrical characteristics
(Ta=25
°
C)
< MOSFET >
Parameter
Symbol
I
GSS
V
(BR)DSS
I
DSS
V
GS(th)
R
DS(on)
Pulsed
C
iss
Y
fs
C
oss
C
rss
t
Pulsed
Pulsed
Pulsed
Pulsed
Qg
Min.
20
0.7
1.0
160
325
60
40
±
10
1
2.0
200
260
340
μ
A
V
V
GS
=
±
12V
/
V
DS
=
0V
I
D
=
1mA
/
V
GS
=
0V
V
DS
=
20V
/
V
GS
=
0V
V
DS
=
10V, I
D
=
0.75A
V
DS
=
10V
/
I
D
=
1mA
I
D
=
1.5A, V
GS
=
4.5V
I
D
=
1.5A, V
GS
=
4V
I
D
=
0.75A, V
GS
=
2.5V
V
DS
=
10V
V
GS
=
0V
f
=
1MHz
μ
A
V
m
m
m
pF
S
pF
pF
10
10
I
D
=
0.75A
V
DD
V
GS
=
4.5
V
R
L
=
20
R
GS
=
10
ns
ns
t
4.2
nC
t
1.0
nC
t
1.1
nC
Typ.
Max.
Unit
Conditions
Gate-source leakage
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn
on delay time
Rise Time
Turn off delay time
Gate
drain charge
Fall time
Drain-source breakdown voltage
Static drain
source
on
state resistance
Zero gate voltage drain current
180
240
Pulsed
Total gate charge
35
10
ns
ns
Qgs
Qgd
Gate
source charge
< MOSFET >Body diode(source
drain)
Forward voltage
VSD
1.2
V
I
S
=
0.75A
/
V
GS
=
0V
< Di >
Foward voltage drop
Reverse leakage
V
F
I
R
0.45
200
V
μ
A
I
F
=
1.0A
V
R
=
20V
V
GS
=
4.5
V
I
D
=
1.5A
V
DD
1
5V
15
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