參數(shù)資料
型號(hào): QS6M3
廠商: Rohm CO.,LTD.
英文描述: Small switching
中文描述: 小開(kāi)關(guān)
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 86K
代理商: QS6M3
QS6M3
Transistors
z
Electrical characteristics
(Ta=25
°
C)
<Tr2. P-ch MOSFET>
3/7
Parameter
Symbol
I
GSS
V
(BR) DSS
I
DSS
V
GS (th)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Min.
20
0.7
1.0
Typ.
155
170
310
270
40
35
10
12
45
20
3.0
0.8
0.85
Max.
10
1
2.0
215
235
430
Unit
μ
A
V
μ
A
V
Conditions
R
DS (on)
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
Pulsed
z
Body diode characteristics
(Source-Drain)
<Tr2. P-ch MOSFET>
Parameter
Forward voltage
Pulsed
V
GS
=
12V, V
DS
=
0V
I
D
=
1mA, V
GS
=
0V
V
DS
=
20V, V
GS
=
0V
V
DS
=
10V, I
D
=
1mA
I
D
=
1.5A, V
GS
=
4.5V
I
D
=
1.5A, V
GS
=
4.0V
I
D
=
0.75A, V
GS
=
2.5V
I
D
=
0.75A, V
DS
=
10V
V
DS
=
10V
V
GS
=
0V
f
=
1MHz
I
D
=
0.75A, V
DD
15V
V
DD
15V
V
GS
=
4.5V
I
D
=
1.5A
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
GS
=
4.5V
R
L
=
20
R
GS
=
10
R
L
=
10
R
GS
=
10
V
SD
1.2
V
I
S
=
0.75A, V
GS
=
0V
Symbol
Min.
Typ.
Max.
Unit
Conditions
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