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參數(shù)資料
| 型號： | QS6M3 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Small switching |
| 中文描述： | 小開關(guān) |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 86K |
| 代理商： | QS6M3 |
QS6M3
Transistors
P-ch
z
Electrical characteristic curves
5/7
10
0.01
100
1000
0.1
1
10
100
DRAIN-SOURCE VOLTAGE :
V
DS
(V)
C
Ta
=
25
°
C
f
=
1MHz
V
GS
=
0V
C
iss
C
rss
C
oss
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
1
100
1000
0.1
1
10
DRAIN CURRENT :
I
D
(A)
S
Ta
=
25
°
C
V
DD
=
15V
V
GS
=
4.5V
R
G
=
10
Pulsed
t
d (off)
t
d (on)
t
r
t
f
Fig.2 Switching Characteristics
Ta
=
25
°
C
V
DD
=
15V
I
D
=
1.5A
R
G
=
10
Pulsed
0
0.5
1
1.5
2
2.5
3
3.5
TOTAL GATE CHARGE : Qg (nC)
0
1
2
3
4
5
6
7
8
G
V
G
Fig.3
Dynamic Input Characteristics
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
GATE-SOURCE VOLTAGE :
V
GS
(V)
0.001
0.01
0.1
1
10
D
I
D
V
DS
=
10V
Pulsed
Fig.4
Typical Transfer Characteristics
Ta
=
75
°
C
Ta
=
25
°
C
Ta
=
25
°
C
Ta
=
125
°
C
0
2
4
6
8
10
12
GATE-SOURCE VOLTAGE :
V
GS
(V)
0
100
200
300
400
500
S
O
R
D
)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta
=
25
°
C
Pulsed
I
D
=
1.5A
I
D
=
0.75A
0.0
0.5
1.0
1.5
2.0
SOURCE-DRAIN VOLTAGE :
V
SD
(V)
0.01
0.1
1
10
R
I
S
Fig.6 Source Current vs.
Source-Drain Voltage
Ta
=
25
°
C
V
GS
=
0V
Pulsed
10
100
1000
10000
DRAIN CURRENT :
I
D
(A)
S
O
R
D
)
0.1
1
10
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (
Ι
)
V
GS
=
4.5V
Pulsed
Ta
=
25
°
C
Ta
=
25
°
C
Ta
=
75
°
C
Ta
=
125
°
C
10
100
1000
10000
0.1
1
10
DRAIN CURRENT :
I
D
(A)
S
O
R
D
)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (
ΙΙ
)
V
GS
=
4V
Pulsed
Ta
=
25
°
C
Ta
=
25
°
C
Ta
=
75
°
C
Ta
=
125
°
C
10
100
1000
10000
0.1
1
10
DRAIN CURRENT :
I
D
(A)
S
O
R
D
)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (
ΙΙΙ
)
V
GS
=
2.5V
Pulsed
Ta
=
25
°
C
Ta
=
25
°
C
Ta
=
75
°
C
Ta
=
125
°
C
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