參數(shù)資料
型號： S12BDLCV1D
廠商： Motorola, Inc.
英文描述： MC9S12DT128 Device User Guide V02.09
中文描述： MC9S12DT128設(shè)備的用戶手冊V02.09
文件頁數(shù)： 4/138頁
文件大?。?/td> 2083K
代理商： S12BDLCV1D
MC9S12DT128 Device User Guide — V02.09
4
V02.07
29 Jan
2003
29 Jan
2003
Added 3L40K mask set in section 1.6
Corrected register entries in section 1.5.1 “Detailed Memory Map”
Updated description for ROMCTL in section 2.3.31
Updated section 4.3.3 “Unsecuring the Microcontroller”
Corrected and updated device-specific information for OSC
(section 8.1) & Byteflight (section 15.1)
Updated footnote in Table A-4 “Operating Conditions”
Changed reference of VDDM to VDDR in section A.1.8
Removed footnote on input leakage current in Table A-6 “5V I/O
Characteristics”
Added part numbers MC9S12DT128E, MC9S12DG128E, and
MC9S12DJ128E in “Preface” and related part number references
Removed mask sets 0L40K and 2L40K from Table 1-3
Replaced references to HCS12 Core Guide by the individual
HCS12 Block guides in Table 0-2, section 1.5.1, and section 6;
updated Fig.3-1 “Clock Connections” to show the individual HCS12
blocks
Corrected PIM module name and document order number in Table
0-2 “Document References”
Corrected ECT pulse accumulators description in section 1.2
“Features”
Corrected KWP5 pin name in Fig 2-1 112LQFP pin assignments
Corrected pull resistor CTRL/reset states for PE7 and PE4-PE0 in
Table 2.1 “Signal Properties”
Mentioned “S12LRAE” bootloader in Flash section 17
Corrected footnote on clamp of TEST pin under Table A-1
“Absolute Maximum Ratings”
Corrected minimum bus frequency to 0.25MHz in Table A-4
“Operating Conditions”
Replaced “burst programming” by “row programming” in A.3 “NVM,
Flash and EEPROM”
Corrected blank check time for EEPROM in Table A-11 “NVM
Timing Characteristics”
Corrected operating frequency in Table A-18 “SPI Master/Slave
Mode Timing Characteristics
V02.08
26 Feb
2003
26 Feb
2003
V02.09
15 Oct
2003
15 Oct
2003
Version
Number
Revision
Date
Effective
Date
Author
Description of Changes
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