參數(shù)資料
型號: SAA4956TJ
廠商: NXP SEMICONDUCTORS
元件分類: 存儲器
英文描述: 2.9-Mbit field memory with noise reduction
中文描述: SPECIALTY MEMORY CIRCUIT, PDSO40
封裝: PLASTIC, SOJ-40
文件頁數(shù): 20/36頁
文件大小: 243K
代理商: SAA4956TJ
1998 Dec 08
20
Philips Semiconductors
Preliminary specification
2.9-Mbit field memory with noise reduction
SAA4956TJ
Fig.6 D0 controlled entry sequence of the random write block access mode.
handbook, full pagewidth
MGK679
0
1
2
3
0
1
2
3
write data
write data
at block address:
write latency
(minimum 18 SWCK)
18
19
serial input of write block address
(13 SWCK)
write data
17
34
35
36
start
sequence
(4 SWCK)
2
5
3
4
1
SWCK
RSTW
WE
IE
D0
D1 to D11
MSB
LSB
random write block address
WE LOW: D0 controlled
Fig.7 IE controlled entry sequence of the random write block access mode.
handbook, full pagewidth
MGK680
0
1
2
3
write data
at block address:
write latency
(minimum 18 SWCK)
18
19
serial input of write block address
(13 SWCK)
write data
17
34
35
36
start
sequence
(4 SWCK)
2
5
3
4
1
SWCK
RSTW
WE
IE
D0 to D11
MSB
LSB
random write block address
WE HIGH: IE controlled
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