Table 3. DC Characteristics, VD =3.3 V
參數(shù)資料
型號(hào): SI3056SSI-EVB
廠商: Silicon Laboratories Inc
文件頁數(shù): 67/94頁
文件大小: 0K
描述: BOARD EVAL SI3056/SI3018 SSI
標(biāo)準(zhǔn)包裝: 1
主要目的: 電信,數(shù)據(jù)采集裝置(DAA)
已用 IC / 零件: Si3056
已供物品: 板,CD
Si3056
Si3018/19/10
Rev. 1.05
7
Table 3. DC Characteristics, VD =3.3 V
(VD = 3.0 to 3.6 V, TA = 0 to 70 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
High Level Input Voltage
VIH
2.4
V
Low Level Input Voltage
VIL
——
0.8
V
High Level Output Voltage
VOH
IO =–2 mA
2.4
V
Low Level Output Voltage
VOL
IO = 2 mA
0.35
V
Input Leakage Current
IL
–10
10
A
Power Supply Current, Digital1
ID
VD pin
15
mA
Total Supply Current, Sleep Mode1
ID
PDN = 1, PDL = 0
9
mA
Total Supply Current, Deep Sleep1,2
ID
PDN = 1, PDL = 1
1
mA
Notes:
1. All inputs at 0.4 or VD – 0.4 (CMOS levels). All inputs are held static except clock and all outputs unloaded
(Static IOUT = 0mA).
2. RGDT is not functional in this state.
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