參數(shù)資料
型號(hào)： SI824XCLASSD-KIT
廠商： Silicon Laboratories Inc
文件頁(yè)數(shù)： 16/30頁(yè)
文件大小： 0K
描述： BOARD EVAL FOR SI824X
標(biāo)準(zhǔn)包裝： 1
放大器類型： D 類
輸出類型： 2 通道（立體聲）
在某負(fù)載時(shí)最大輸出功率 x 通道數(shù)量： 120W x 2 @ 8 歐姆
板類型： 完全填充
已用 IC / 零件： Si824x
已供物品： 板
其它名稱： 336-2002
Si824x
Rev. 1.0
23
4. Applications
The following examples illustrate typical circuit configurations using the Si824x.
4.1. Class D Digital Audio Driver
Figures 39 and 40 show the Si8241/4 controlled by a single PWM signal. Supply can be unipolar (0 to 1500 V) or
bipolar (± 750 V).
Figure 39. Si824x in Half-Bridge Audio Application
Figure 40. Si824x in Half-Bridge Audio Application
D1 and CB form a conventional bootstrap circuit that allows VOA to operate as a high-side driver for Q1, which has
a maximum drain voltage of 1500 V. VOB is connected as a conventional low-side driver. Note that the input side of
the Si824x requires VDD in the range of 4.5 to 5.5 V, while the VDDA and VDDB output side supplies must be
between 6.5 and 24 V with respect to their respective grounds. The boot-strap start up time will depend on the CB
cap chosen. VDD2 is usually the same as VDDB. Also note that the bypass capacitors on the Si824x should be
located as close to the chip as possible. Moreover, it is recommended that 0.1 and 10 F bypass capacitors be
used to reduce high frequency noise and maximize performance. The D1 diode should be a fast-recovery diode; it
should be able to withstand the maximum high voltage (e.g. 1500 V) and be low-loss. See “AN486: High-Side
Bootstrap Design Using Si823x ISODrivers in Power Delivery Systems” for more details in selecting the bootstrap
cap (CB) and diode (D1).
Si8241/4
CB
GNDI
VDDI
PWM
VDDA
VOA
GNDA
VOB
VDDI
VDDB
GNDB
DISABLE
DT
RDT
CONTROLLER
C1
1uF
PWMOUT
I/O
Q1
Q2
D1
VDDB
C3
10uF
VDD2
C2
1 F
1500 V max
Si8241/4
CB
GNDI
VDDI
PWM
VDDA
VOA
GNDA
VOB
VDDI
VDDB
GNDB
DISABLE
DT
RDT
CONTROLLER
C1
1uF
PWMOUT
I/O
Q1
Q2
D1
VDDB
C3
10uF
VDD2
C2
1 F
+750 V max
-750 V max
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