參數(shù)資料
型號: SPD08N10
廠商: INFINEON TECHNOLOGIES AG
英文描述: SIPMOS Power Transistor
中文描述: SIPMOS功率晶體管
文件頁數(shù): 4/8頁
文件大小: 121K
代理商: SPD08N10
SPD 08N10
Data Sheet
4
05.99
Electrical Characteristics
, at
T
j = 25 C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Gate to source charge
V
DD
= 80 V,
I
D
= 8.4 A
Gate to drain charge
V
DD
= 80 V,
I
D
= 8.4 A
Gate charge total
V
DD
= 80 V,
I
D
= 8.4 A,
V
GS
= 0 to 10 V
Gate plateau voltage
V
DD
= 80 V,
I
D
= 8.4 A
2.7
nC
1.8
Q
gs
-
-
6.65
Q
gd
10
-
12.6
18.9
Q
g
V
(plateau)
5.93
-
V
-
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 C
Inverse diode direct current,pulsed
T
C
= 25 C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 16.8 A
Reverse recovery time
V
R
= 30 V,
I
F
=
I
S
, d
i
F
/d
t
= 100 A/μs
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S
, d
i
F
/d
t
= 100 A/μs
I
S
-
-
8.4
A
I
SM
-
-
33.6
V
SD
-
1.2
V
1.6
t
rr
-
90
ns
135
Q
rr
-
μC
0.35
0.55
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