參數(shù)資料
型號(hào): SPD08N10
廠商: INFINEON TECHNOLOGIES AG
英文描述: SIPMOS Power Transistor
中文描述: SIPMOS功率晶體管
文件頁數(shù): 8/8頁
文件大?。?/td> 121K
代理商: SPD08N10
SPD 08N10
Data Sheet
8
05.99
Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D puls
= 8.4 A
SPD08N10
0
2
4
6
8
10
12
14
16
nC
19
Q
Gate
0
2
4
6
8
10
12
V
16
V
G
DS max
V
0,8
DS max
V
0,2
Avalanche Energy
E
AS
=
f
(
T
j
)
parameter:
I
D
= 8.4 A,
V
DD
= 25 V
R
GS
= 25
20
40
60
80
100
120
C
160
T
j
0
5
10
15
20
25
mJ
35
E
A
Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
-60
-20
20
60
100
C
180
T
j
90
92
94
96
98
100
102
104
106
108
110
112
114
V
120
SPD08N10
V
(
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