參數(shù)資料
型號(hào): SPD08N10
廠商: INFINEON TECHNOLOGIES AG
英文描述: SIPMOS Power Transistor
中文描述: SIPMOS功率晶體管
文件頁(yè)數(shù): 7/8頁(yè)
文件大?。?/td> 121K
代理商: SPD08N10
SPD 08N10
Data Sheet
7
05.99
Drain-source on-resistance
R
DS(on)
=
f
(
T
j
)
parameter :
I
D
= 5.4 A,
V
GS
= 10 V
SPD08N10
-60
-20
20
60
100
C
180
T
j
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.0
R
D
typ
98%
Gate threshold voltage
V
GS(th)
=
f
(
T
j
)
parameter :
V
GS
=
V
DS
,
I
D
= 1 mA
-60
-20
20
60
100
C
160
T
j
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
4.4
V
5.0
V
G
min
typ
max
Typ. capacitances
C =
f
(V
DS
)
parameter:
V
GS
= 0 V,
f
= 1 MHz
0
5
10
15
20
25
30
V
40
V
DS
1
10
2
10
3
10
pF
C
Ciss
Coss
Crss
Forward characteristics of reverse diode
I
F
=
f
(
V
SD
)
parameter:
T
j
,
t
p
= 80 μs
SPD08N10
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
-1
10
0
10
1
10
2
10
A
I
F
T
j
= 25 C typ
T
j
= 150 C typ
T
j
= 25 C (98%)
T
j
= 150 C (98%)
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