參數(shù)資料
型號(hào): SPI10N10
廠商: INFINEON TECHNOLOGIES AG
英文描述: CAP 1000PF 100V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
中文描述: SIPMOS功率晶體管
文件頁數(shù): 6/8頁
文件大?。?/td> 787K
代理商: SPI10N10
2002-01-31
Page 6
Preliminary data
SPI10N10
SPP10N10,SPB10N10
9 Drain-source on-state resistance
R
DS(on)
=
f
(
T
j
)
parameter :
I
D
= 7.8 A,
V
GS
= 10 V
-60
-20
20
60
100
140
°C
T
j
200
0
50
100
150
200
250
300
350
400
450
500
550
600
m
750
SPP10N10
R
D
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
=
f
(
T
j)
parameter:
V
GS
=
V
DS
-65
-35
-5
25
55
85
115
°C
T
j
175
1.5
2
2.5
3
V
4
V
G
I
D
=1mA
I
D
=21μA
11 Typ. capacitances
C
=
f
(
V
DS
)
parameter:
V
GS
=0V,
f
=1 MHz
3
10
0
5
10
15
20
25
30
V
V
DS
40
1
10
2
10
pF
C
Ciss
Coss
Crss
12 Forward character. of reverse diode
I
F
=
f
(V
SD
)
parameter:
T
j , t
p
= 80 μs
2
10
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
-1
10
0
10
1
10
A
SPP10N10
I
F
T
j
= 25 °C typ
T
j
= 175 °C typ
T
j
= 25 °C (98%)
T
j
= 175 °C (98%)
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