參數(shù)資料
型號(hào): SPI80N04S2-04
廠商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS Power-Transistor
中文描述: 的OptiMOS功率晶體管
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 269K
代理商: SPI80N04S2-04
2004-05-24
Page 1
SPI80N04S2-04
SPP80N04S2-04,SPB80N04S2-04
Opti
MOS
Power-Transistor
Product Summary
V
DS
R
DS(on)
max. SMD version
I
D
40
V
m
A
3.4
80
Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
d
v
/d
t
rated
P- TO263 -3-2
P- TO262 -3-1
P- TO220 -3-1
Marking
2N0404
2N0404
2N0404
Type
SPP80N04S2-04
Package
P- TO220 -3-1
Ordering Code
Q67040-S4260
SPB80N04S2-04
P- TO263 -3-2
Q67040-S4257
SPI80N04S2-04
P- TO262 -3-1
Q67060-S6173
Maximum Ratings
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
Value
Unit
A
T
C
=25°C
T
C
=100°C
Pulsed drain current
I
D
80
80
T
C
=25°C
Avalanche energy, single pulse
I
D puls
320
I
D
=80A,
V
DD
=25V,
R
GS
=25
Repetitive avalanche energy, limited by
T
jmax
2)
Reverse diode d
v
/d
t
E
AS
810
mJ
E
AR
d
v
/d
t
30
I
S
=80A,
V
DS
=32V,
d
i
/d
t
=200A/μs,
T
jmax
=175°C
Gate source voltage
Power dissipation
6
kV/μs
V
GS
P
tot
±20
300
V
T
C
=25°C
Operating and storage temperature
W
T
j ,
T
stg
-55... +175
55/175/56
°C
IEC climatic category; DIN IEC 68-1
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