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參數(shù)資料
| 型號(hào)： | ST62E94F1 |
| 英文描述： | IC PSRAM 32MB 54-VFBGA |
| 中文描述： | 通信集成電路 |
| 文件頁數(shù)： | 63/82頁 |
| 文件大小： | 870K |
| 代理商： | ST62E94F1 |
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63/82
ST62T18C/E18C
6 ELECTRICAL CHARACTERISTICS
6.1 ABSOLUTE MAXIMUM RATINGS
This product contains devices to protect the inputs
against damage due to high static voltages, how-
ever it is advisable to take normal precaution to
avoid application of any voltage higher than the
specified maximum rated voltages.
For proper operation it is recommended that V
I
and V
O
be higher than V
SS
and lower than V
DD
.
Reliability is enhanced if unused inputs are con-
nected to an appropriate logic voltage level (V
DD
or V
SS
).
Power Considerations
.The average chip-junc-
tion temperature, Tj, in Celsius can be obtained
from:
Tj=TA + PD x RthJA
Where:TA = Ambient Temperature.
RthJA =Package thermal resistance (junc-
tion-to ambient).
PD = Pint + Pport.
Pint =IDD x VDD (chip internal power).
Pport =Port power dissipation (determined
by the user).
Notes:
-
Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
- (1) Within these limits, clamping diodes are guarantee to be not conductive. Voltages outside these limits are authorised as long as injection
current is kept within the specification.
Symbol
V
DD
V
I
V
O
IV
DD
IV
SS
Tj
T
STG
Parameter
Value
-0.3 to 7.0
Unit
V
V
V
mA
mA
°C
°C
Supply Voltage
Input Voltage
Output Voltage
Total Current into V
DD
(source)
Total Current out of V
SS
(sink)
Junction Temperature
Storage Temperature
V
SS
- 0.3 to V
DD
+ 0.3
(1)
V
SS
- 0.3 to V
DD
+ 0.3
(1)
80
100
150
-60 to 150
63
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