參數(shù)資料
型號: STB40NF10-1
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 100V - 0.024ohm - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET
中文描述: N溝道100V的- 0.024ohm - 50A條TO-220/D2PAK/I2PAK低柵極電荷STripFET⑩二功率MOSFET
文件頁數(shù): 3/9頁
文件大?。?/td> 158K
代理商: STB40NF10-1
3/9
STB40NF10L
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
V
DD
= 50 V,I
D
= 20 A
R
G
= 4.7
V
GS
= 4.5V
(see test circuit, Figure 3)
Min.
Typ.
25
Max.
Unit
ns
t
r
Rise Time
82
ns
Q
g
Q
gs
Total Gate Charge
V
DD
= 80V, I
D
=40A,V
GS
= 5V
46
64
nC
Gate-Source Charge
12
nC
Q
gd
Gate-Drain Charge
22
nC
Parameter
Test Conditions
V
DD
= 50 V, I
D
= 20 A,
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 3)
Vclamp =80V,I
D
= 40 A
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 3)
Min.
Typ.
64
24
Max.
Unit
ns
ns
Turn-off-Delay Time
Fall Time
t
d(off)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
51
29
53
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
40
A
Source-drain Current (pulsed)
160
A
Forward On Voltage
I
SD
= 40 A, V
GS
= 0
I
SD
= 40 A, di/dt = 100A/
μ
s,
V
DD
= 30V, T
j
= 150
°
C
(see test circuit, Figure 5)
1.3
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
110
467
8
ns
nC
A
Safe Operating Area
Thermal Impedance
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相關(guān)代理商/技術(shù)參數(shù)
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STB40NF10L 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 100V - 0.028ohm - 40A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
STB40NF10LT4 功能描述:MOSFET N-Ch 100 Volt 40 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB40NF10T4 功能描述:MOSFET N-Ch 100 Volt 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB40NF20 功能描述:MOSFET Low charge STripFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB40NS15 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 150V - 0.042ohm - 40A D2PAK MESH OVERLAY⑩ MOSFET