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參數(shù)資料
| 型號： | STB6NC90ZT4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 5.4A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 900V五（巴西）直| 5.4AI（四）|對252AA |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 130K |
| 代理商： | STB6NC90ZT4 |
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1
62.5
0.5
300
o
C/W
o
C/W
o
C/W
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
C, pulse width limited by T
j
max,
δ
< 1%)
6.5
A
E
AS
215
mJ
E
AR
9.5
mJ
I
AR
4.3
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
600
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
V
GS
=
±
30 V
T
c
= 125
o
C
250
1000
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
I
D
= 250
μ
A
I
D
= 3 A
I
D
= 3 A
Min.
Typ.
Max.
Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
2.25
3
3.75
V
A
V
GS
= 10V
V
GS
= 10V
T
c
= 100
o
C
1
1.2
2.4
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
6.5
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 3 A
3.5
5.6
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1150
155
40
1550
210
55
pF
pF
pF
STB6NA60
2/10
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